MMBTA13,14 features darlington amplifier marking : MMBTA13:k2d; mmbta14:k3d maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 10 v i c collector current -continuous 0.3 a p c collector power dissipation 30 0 mw r ja thermal resistance junction to ambient 417 /w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 100ua, i b =0 30 v collector-emitter breakdown voltage v (br)ebo i e = 100 a, i c =0 10 v collector cut-off current i cbo * v cb =30 v , i e =0 0.1 a emitter cut-off current i ebo * v eb = 10v , i c =0 0.1 a h fe(1) * v ce =5v, i c = 10ma MMBTA13 mmbta14 5000 10000 dc current gain h fe(2) * v ce =5v, i c = 100ma MMBTA13 mmbta14 10000 20000 collector-emitter saturation voltage v ce (sat) * i c =100ma, i b =0.1ma 1.5 v base-emitter saturation voltage v be (sat) * i c =100ma, i b =0.1ma 2 v base-emitter voltage v be * v ce =5v,i c = 100ma 2.0 v transition frequency f t v ce =5v, i c = 10ma f= 100mhz 125 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 12 pf * pulse test : pulse width 300 s,duty cycle 2%. unit : mm so t -23 1. base 2. emitter 3. collector transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBTA13,14 2 date:2011/05 www.htsemi.com semiconductor jinyu
MMBTA13,14 3 date:2011/05 www.htsemi.com semiconductor jinyu
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